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- W2020110667 abstract "In this work, multi-bit flash-like memory cell based on Si nanowire field-effect transistor and multiple Ta2O5 charge-trapping stacks have been fabricated and fully characterized. The memory cells exhibited staircase, discrete charged states at small gate voltages. Such discrete multi-bit on one memory cell is attractive for high memory density. These non-volatile memory devices exhibited fast programming/erasing speed, excellent retention, and endurance, indicating the advantages of integrating the multilayer of charge-storage stacks on the nanowire channel. Such high-performance flash-like non-volatile memory can be integrated into the microprocessor chip as the local memory which requires high density and good endurance." @default.
- W2020110667 created "2016-06-24" @default.
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- W2020110667 date "2014-06-09" @default.
- W2020110667 modified "2023-10-07" @default.
- W2020110667 title "Discrete charge states in nanowire flash memory with multiple Ta2O5 charge-trapping stacks" @default.
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- W2020110667 doi "https://doi.org/10.1063/1.4883717" @default.
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