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- W2020113075 abstract "The influence of accelerated stress testing on the electrical properties of Cu(In,Ga)(S,Se)2 thin-film solar cells is presented. Although encapsulated modules are stable, extended exposure of unencapsulated cells to damp heat (144 h, 264 h and 438 h) at 85°C and 85% humidity leads to a reduction of the fill factor and the open-circuit voltage. We further analyzed these changes by applying admittance spectroscopy, deep-level transient spectroscopy and current–voltage measurements. Damp heat stress reduces the net doping concentration of the absorber material and shifts a dominant defect state close to or at the buffer/absorber interface to higher activation energies. By comparing experimentally observed changes with the SCAPS device simulation program several possible causes for the observed changes in electrical properties are discussed: decrease of ZnO resistivity; decrease of the density of interface states; increase of shallow acceptor concentration and the introduction of deep acceptors in the Cu(In,Ga)(S,Se)2 absorber." @default.
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- W2020113075 date "2002-02-01" @default.
- W2020113075 modified "2023-10-16" @default.
- W2020113075 title "Influence of damp heat testing on the electrical characteristics of Cu(In,Ga)(S,Se)2 solar cells" @default.
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- W2020113075 doi "https://doi.org/10.1016/s0040-6090(01)01511-5" @default.
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