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- W2020122467 abstract "In this work, a buffer structure of a-GaAs/a-Si double amorphous layers was used for the epitaxial growth of GaAs on Si substrate by metal-organic vapor phase epitaxy. The atomic force microscopy (AFM) images exhibited that the root-mean-square (RMS) value of the surface morphology was only 1.331 nm. The full-width at half-maximum (FWHM) of the double crystal X-ray rocking curve in the (4 0 0) reflection was about 102 arcsec. The top-surface etch-pit density (EPD) revealed by molten KOH etching was lower than 106 cm−2. From the material characterizations described above, the use of a-GaAs/a-Si buffer structure was found to be a very simple and effective approach for obtaining high-quality GaAs on Si for solar cell applications." @default.
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- W2020122467 date "2006-10-01" @default.
- W2020122467 modified "2023-09-27" @default.
- W2020122467 title "Heteroepitaxial growth of GaAs on Si by MOVPE using a-GaAs/a-Si double-buffer layers" @default.
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- W2020122467 doi "https://doi.org/10.1016/j.jcrysgro.2006.07.026" @default.
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