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- W2020149046 abstract "Normally-off AlGaN/GaN MOS HEMTs were successfully fabricated and investigated by simple KOH wet etch and rf-sputtered HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> as a gate insulator. The proposed KOH wet etch resulted in an adequate recess-depth and smooth etched surface. The gate-recessed HEMT exhibits threshold voltage (V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>th</sub> ) shifts from -3 to 1.5 V after 150 s KOH-wet etch. The breakdown voltage of 1580 V and R <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>on, sp</sub> of 8.09 mΩ·cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> was measured in the AlGaN/GaN HEMT with the gate-drain distance of 20 μm-long. The high FOM (figure of merit) of 308 MW/cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> was achieved. Our experimental results indicate that the proposed simple KOH wet etching and rf sputtered HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> -gate insulator may be promising for the normally-off AlGaN/GaN MOS HEMTs fabrication." @default.
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- W2020149046 date "2013-05-01" @default.
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- W2020149046 title "Normally-off AlGaN/GaN MOS-HEMTs by KOH wet etch and rf-sputtered HfO<inf>2</inf> gate insulator" @default.
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