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- W2020162035 abstract "Phosphidization of GaAs surfaces has been attempted by exposing to phosphine (PH3) plasma in a conventional parallel-plate reactor. The presence of P and H atoms near the GaAs surface is confirmed by secondary ion mass spectroscopy analysis. The metal work-function dependence of the Schottky barrier height is indicated for Schottky junctions formed on the phosphidized GaAs surface. This may suggest a reduction of the surface defect density due to phosphidization. Since no similar effect appears in the case of hydrogenation, surface passivation due to phosphidization is differentiated from H passivation. No variation in Schottky characteristics occurs for Schottky junctions formed by in situ annealing after PH3-plasma treatment, while a significant degradation of the ideality factor appears by annealing at 350°C for 3 min in the case of H2-plasma treatment. Furthermore, it is demonstrated that PH3 plasma is effective in suppressing generation of the deep electron trap with an activation energy of 0.8 eV relating to EL2." @default.
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- W2020162035 date "1992-01-01" @default.
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- W2020162035 title "Schottky junctions on phosphidized GaAs surfaces" @default.
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- W2020162035 doi "https://doi.org/10.1016/0169-4332(92)90249-w" @default.
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