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- W2020162151 abstract "Fundamental characteristics such as retention and read endurance of a ferroelectric gate field effect transistor (F-FET) memory with an intermediate electrode were investigated and reported. It was verified that the retention time of the new F-FET was longer than 98 h. By taking into account the leakage currents of both the ferroelectric capacitor C f and the MOSFET used for data writing (W-FET), we found that, for positive reading voltage, the leakage currents of the ferroelectric capacitor and the W-FET are unfavorable for the P r + state and the P r - state, respectively, in terms of read endurance. The overall read endurance is determined by a competition between the leakage currents of the C f and the W-FET. The drain-connected configuration (DCC) was effective to minimize the unexpected influence of the leakage current of the W-FET." @default.
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- W2020162151 date "2004-04-01" @default.
- W2020162151 modified "2023-09-25" @default.
- W2020162151 title "Retention and Read Endurance Characteristics of a Ferroelectric Gate Field Effect Transistor Memory with an Intermediate Electrode" @default.
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- W2020162151 doi "https://doi.org/10.1143/jjap.43.2220" @default.
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