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- W2020170294 abstract "Three types of InGaP/GaAs heterojunction-emitter bipolar transistors (HEBTs) have been grown by low-pressure metalorganic chemical vapor deposition. The current gains are 18, 40, and 55 for the conventional, single δ-doped, and double δ-doped HEBTs, respectively. Moreover, the offset voltage of the double δ-doped structure is as low as 70 mV. Experimental results demonstrated that the current gain and offset voltage can be improved by using the δ-doped emitter structure and undoped spacers on both sides of the base." @default.
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- W2020170294 date "1999-04-01" @default.
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- W2020170294 title "An improved heterojunction-emitter bipolar transistor using δ-doped and spacer layers" @default.
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