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• W2020180970 abstract "Multicrystalline silicon (mc-Si) is currently dominating the silicon solar cell market due to low ingot costs, but its efficiency is limited by transition metals, extended defects, and light-induced degradation (LID). LID is traditionally associated with a boron-oxygen complex, but the origin of the degradation in the top of the commercial mc-Si brick is revealed to be interstitial copper. We demonstrate that both a large negative corona charge and an aluminum oxide thin film with a built-in negative charge decrease the interstitial copper concentration in the bulk, preventing LID in mc-Si." @default.
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• W2020180970 date "2014-04-15" @default.
• W2020180970 modified "2023-09-26" @default.
• W2020180970 title "Preventing light-induced degradation in multicrystalline silicon" @default.
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• W2020180970 doi "https://doi.org/10.1063/1.4871404" @default.
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