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- W2020194939 abstract "The electroreflectance (ER) technique for measuring ion implantation damage is developed and evaluated. The technique is useful for measuring damage profiles in GaAs samples. The ER measurement using the E1 critical point is shown to be primarily sensitive to a depth of 0.008 μm. The damage profiles of S-, Cd-, Be-, and Ne-implanted GaAs samples are determined employing a selective etch technique. The annealing characteristics of these GaAs implants are shown to be dose dependent." @default.
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- W2020194939 title "Electroreflectance measurements of lattice damage in ion implanted GaAs" @default.
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