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• W2020199503 abstract "The results of photoluminescence (PL), detection-energy-dependent photoluminescence excitation (DEDPLE), excitation-energy-dependent photoluminescence (EEDPL), and strain state analysis (SSA) of three InGaN/GaN quantum-well (QW) samples with silicon doping in the well, barrier and an undoped structure are compared. The SSA images show strongly clustering nanostructures in the barrier-doped sample and relatively weaker composition fluctuations in the undoped and well-doped samples. Differences in silicon doping between the samples give rise to the differences in DEDPLE and EEDPL spectra, as a result of the differences in carrier localization. In addition, the PL results provide us clues for speculating that the S-shaped PL peak position behavior is dominated by the quantum-confined Stark effect in an undoped InGaN/GaN QW structure." @default.
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• W2020199503 date "2004-04-01" @default.
• W2020199503 modified "2023-10-16" @default.
• W2020199503 title "Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions" @default.
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• W2020199503 doi "https://doi.org/10.1063/1.1690872" @default.
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