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- W2020261648 abstract "Chlorine implantation in silicon reduces the phosphorus diffusivity in oxidizing atmosphere and avoids the formation (or strongly reduces the size) of the oxidation induced stacking faults. These effects are evidenced after oxidation in steam atmosphere at the temperatures of 1100 and 1150 °C. These phenomena can be explained by hypothesizing a direct reaction between Cl atoms and silicon interstitials, which results in the reduction of the interstitial supersaturation produced by the oxidation process. On the other hand, the presence of chlorine atoms inside the silicon lattice introduces additional scattering centers, thus reducing the electron mobility; moreover, the formation of secondary defects, mostly dislocations, are observed by electron microscopy after the oxidation step. Chlorimplantation in Silizium reduziert das Diffusionsvermögen von Phosphor in einer oxydierenden Atmosphäre und behindert die Bildung (oder vermindert stark die Größe) oxydationsinduzierter Stapelfehler. Diese Effekte werden nach Oxydation in Dampfatmosphäre bei Temperaturen von 1100 und 1150 °C beobachtet. Die Ergebnisse können durch die Annahme einer direkten Reaktion zwischen Cl-Atomen und Si-Zwischengitterstörstellen erklärt werden, wobei die durch Oxydation erzeugte Übersättigung an Zwischengitterstörstellen verringert wird. Andererseits führen die im Siliziumgitter vorhandenen Chlor-Atome weitere Streuzentren ein, die die Elektronenbeweglichkeit reduzieren; überdies wird eine Bildung sekundärer Defekte, meistens Versetzungen, durch elektronenmikroskopische Untersuchungen nach der Oxydation festgestellt." @default.
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- W2020261648 date "1985-01-16" @default.
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- W2020261648 title "Influence of chlorine implantation on phosphorus diffusivity and oxidation-induced defects in silicon" @default.
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- W2020261648 doi "https://doi.org/10.1002/pssa.2210870121" @default.
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