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• W2020268892 abstract "We fabricate reliable interconnects via advanced barrierless metallization by cosputtering a pure copper (Cu) film with small amounts of holmium nitride (HoN x ) on a silicon (Si) substrate. No noticeable interaction occurs between the resulting Cu(HoN x ) film and the substrate even after heating at 660 °C for 1 h. The resistivity of the alloy film, which remains stable after five cycles of heating at 600 °C (total: 2.5 h), is high under the as-deposited condition, but decreases to ∼3.0 µΩ cm after annealing. The leakage current of the alloy film is three times lower than that of the pure Cu film. The correlation between the leakage current and the time-dependent dielectric breakdown (TDDB) lifetime reveals that the alloy film has a TDDB lifetime of >10 years. Furthermore, the alloy film adheres better to the Si substrate than does the pure Cu film. Our alloy film thus has improved features that are desirable for a reliable interconnect." @default.
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• W2020268892 date "2010-05-01" @default.
• W2020268892 modified "2023-09-26" @default.
• W2020268892 title "Copper–Holmium Alloy Film for Reliable Interconnects" @default.
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• W2020268892 doi "https://doi.org/10.1143/jjap.49.05fa03" @default.
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