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• W2020278310 abstract "A compact and inexpensive laser direct writing system, using a continuous wave GaAlAs diode laser array emitting 1 W at λ=796 nm, has been developed for the deposition of WSix on TiN from a gas mixture of WF6 and SiH4. Lines 4 to 15 μm wide and 110–950 nm thick are deposited at 5 μm/s in a static reactor. The W/Si ratio in the bulk of the deposit, as measured by Auger electron spectroscopy, is between 1.1 and 1.4 for the lines deposited from a gas mixture of 1 Torr WF6 and 3 Torr/SiH4. In a dynamic reactor, with a flowing gas mixture of 1 sccm WF6 and 3 sccm SiH4 diluted in 50–150 sccm Ar, lines written at 100 μm/s are typically 4–12 μm wide and 250–800 nm thick. The W/Si ratio in the bulk of the deposit is between 1.5 and 1.8 in this case. Thickness decreases when the argon flow increases suggesting that the growth rate is limited by the transport of the reactive species, at least for a portion of the growth. A tungsten-rich top surface of the deposited layer is also observed, indicating that room temperature reactions, between the gas species and the deposited materials, continue after the deposition." @default.
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• W2020278310 date "1993-05-15" @default.
• W2020278310 modified "2023-09-26" @default.
• W2020278310 title "Diode laser induced chemical vapor deposition of WSi<i>x</i> on TiN from WF6 and SiH4" @default.
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• W2020278310 doi "https://doi.org/10.1063/1.353749" @default.
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