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- W2020282610 abstract "Channel mobility properties of SiC and GaN based MOSFETs and AlGaN/GaN HEMTs are compared in this paper. For a similar active area, the specific on-resistance of the MOSFET is much larger than the on-resistance for the HEMT, which is depending on the electron mobility in their respective channels. Physically-based models are used to fit this experimental transistor mobility." @default.
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- W2020282610 date "2010-04-01" @default.
- W2020282610 modified "2023-09-27" @default.
- W2020282610 title "2DEG HEMT Mobility vs Inversion Channel MOSFET Mobility" @default.
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- W2020282610 doi "https://doi.org/10.4028/www.scientific.net/msf.645-648.1207" @default.
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