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• W2020291201 abstract "Multilayered samples of Nb/Ni have been fabricated by dc triode sputtering. X-ray diffraction patterns were obtained in the reflection geometry. Small-angle data show several order peaks and subsidiary maxima, indicating strong composition modulation. ensuremath{omega}-rocking curves at small angle are sharp, with ensuremath{Delta}ensuremath{omega}ensuremath{sim}0.1ifmmode^circelsetextdegreefi{}. High-angle scans do not show superlattice peaks. The samples have (110) texture for Nb and (111) texture for Ni. Multilayered systems with severe structural size mismatch are incoherent, and Nb/Ni multilayers are among these incoherent systems. Resistivity measurements show logarithmic minima at low temperature. These minima depend on bilayer thickness, shifting, and deepening to a higher temperature with decreasing modulation wavelength. Their origin could be due to weak localization. We have explored the contribution of Ni and Nb layers to this resistivity effect. The role of Ni layers is unclear at present, but we can rule out a modified Kondo mechanism. However, the short mean free path of the conduction electrons in Nb layers, estimated from Gurvitch's model, could play a clear role in this weakly localized regime. The Hall effect in Nb/Ni multilayers shows a clear ferromagnetic character with very well-defined ordinary, ${R}_{0}$, and extraordinary, ${R}_{s}$, coefficients. The samples have saturation magnetizations and hysteresis loops down to nominal 10-Ar{} layer thickness of Ni. The Hall-effect data could be a hint of dimensional effects in ferromagnetism. ${R}_{0}$ and ${R}_{s}$ are temperature independent between 4.2 and 100 K. ${R}_{0}$ is also bilayer-thickness independent, and the carrier concentration seems to remain constant for a fixed Nb/Ni layer thickness ratio. ${R}_{s}$ values show an enhancement in comparison to the ${R}_{s}$ value of pure Ni, and they follow the expression ${R}_{s}$=aensuremath{rho}+A${ensuremath{rho}}^{2}$, typical of itinerant ferromagnetism." @default.
• W2020291201 created "2016-06-24" @default.
• W2020291201 creator A5034853433 @default.
• W2020291201 creator A5037103960 @default.
• W2020291201 date "1988-11-15" @default.
• W2020291201 modified "2023-09-30" @default.
• W2020291201 title "Resistivity and Hall effect in sputtered Nb/Ni multilayers" @default.
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• W2020291201 doi "https://doi.org/10.1103/physrevb.38.9503" @default.
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