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• W2020305887 abstract "Progress in crystal growth techniques has made feasible the realization of periodic semiconductor structures composed of ultrathin layers. Essentially two types of such man-made superlattices may be distinguished: (i) Compositional superlattices, consisting of a periodic sequence of two different semiconductor materials with lattice matching (GaAs-AlxGa1-xAs, for example). A superlattice potential is induced in the conduction and the valence band by the periodic variation of the energy gap in the direction of crystal growth. (ii) Doping superlattices, a sequence of n- and p-doped layers, possibly with undoped layers in between (nipi-structures), grown in an otherwise homogeneous semiconductor bulk. The periodic potential in nipi-crystals is due to the electrostatic potential of fixed ionized impurities, which may be partly compensated by mobile electrons and holes confined to the n- and p-layers, respectively." @default.
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• W2020305887 date "1981-08-01" @default.
• W2020305887 modified "2023-10-16" @default.
• W2020305887 title "Semiconductor Superlattices-A New Material For Research and Applications" @default.
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• W2020305887 doi "https://doi.org/10.1088/0031-8949/24/2/019" @default.
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