FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W2020372992> ?p ?o ?g. }

• W2020372992 endingPage "499" @default.
• W2020372992 startingPage "490" @default.
• W2020372992 abstract "Abstract In this article, surface processes occurring during the etching of Si with a Cl 2 /O 2 /Ar plasma are investigated by means of experiments and modeling. Cl 2 ‐based plasmas are commonly used to etch silicon, while a small fraction of O 2 is added to protect the sidewalls from lateral etching during the shallow trench isolation process. When the oxygen fraction exceeds a critical value, the wafer surface process changes from an etching regime to a deposition regime, drastically reducing the etch rate. This effect is commonly referred to as the etch stop phenomenon. To gain better understanding of this mechanism, the oxygen fraction is varied in the gas mixture and special attention is paid to the effects of oxygen and of the redeposition of non‐volatile etched species on the overall etch/deposition process. It is found that, when the O 2 flow is increased, the etch process changes from successful etching to the formation of a rough surface, and eventually to the actual growth of an oxide layer which completely blocks the etching of the underlying Si. The size of this etch stop island was found to increase as a function of oxygen flow, while its thickness was dependent on the amount of Si etched. This suggests that the growth of the oxide layer mainly depends on the redeposition of non‐volatile etch products. The abrupt change in the etch rate as a function of oxygen fraction was not found back in the oxygen content of the plasma, suggesting the competitive nature between oxidation and chlorination at the wafer. Finally, the wafer and reactor wall compositions were investigated by modeling and it was found that the surface rapidly consisted mainly of SiO 2 when the O 2 flow was increased above about 15 sccm. magnified image" @default.
• W2020372992 created "2016-06-24" @default.
• W2020372992 creator A5032710026 @default.
• W2020372992 creator A5044567603 @default.
• W2020372992 creator A5061052548 @default.
• W2020372992 date "2011-03-29" @default.
• W2020372992 modified "2023-10-12" @default.
• W2020372992 title "Simultaneous Etching and Deposition Processes during the Etching of Silicon with a Cl2/O2/Ar Inductively Coupled Plasma" @default.
• W2020372992 cites W1983044026 @default.
• W2020372992 cites W1994069792 @default.
• W2020372992 cites W2050979317 @default.
• W2020372992 cites W2054727160 @default.
• W2020372992 cites W2061263534 @default.
• W2020372992 cites W2061430937 @default.
• W2020372992 cites W2098997637 @default.
• W2020372992 cites W2123436758 @default.
• W2020372992 cites W2145997305 @default.
• W2020372992 cites W2325999349 @default.
• W2020372992 doi "https://doi.org/10.1002/ppap.201000189" @default.
• W2020372992 hasPublicationYear "2011" @default.
• W2020372992 type Work @default.
• W2020372992 sameAs 2020372992 @default.
• W2020372992 citedByCount "7" @default.
• W2020372992 countsByYear W20203729922012 @default.
• W2020372992 countsByYear W20203729922013 @default.
• W2020372992 countsByYear W20203729922017 @default.
• W2020372992 countsByYear W20203729922019 @default.
• W2020372992 countsByYear W20203729922022 @default.
• W2020372992 crossrefType "journal-article" @default.
• W2020372992 hasAuthorship W2020372992A5032710026 @default.
• W2020372992 hasAuthorship W2020372992A5044567603 @default.
• W2020372992 hasAuthorship W2020372992A5061052548 @default.
• W2020372992 hasConcept C100460472 @default.
• W2020372992 hasConcept C107187091 @default.
• W2020372992 hasConcept C113196181 @default.
• W2020372992 hasConcept C121285527 @default.
• W2020372992 hasConcept C121332964 @default.
• W2020372992 hasConcept C1291036 @default.
• W2020372992 hasConcept C130472188 @default.
• W2020372992 hasConcept C151730666 @default.
• W2020372992 hasConcept C160671074 @default.
• W2020372992 hasConcept C171250308 @default.
• W2020372992 hasConcept C178790620 @default.
• W2020372992 hasConcept C185592680 @default.
• W2020372992 hasConcept C191897082 @default.
• W2020372992 hasConcept C192562407 @default.
• W2020372992 hasConcept C2779227376 @default.
• W2020372992 hasConcept C2779851234 @default.
• W2020372992 hasConcept C2816523 @default.
• W2020372992 hasConcept C43617362 @default.
• W2020372992 hasConcept C540031477 @default.
• W2020372992 hasConcept C544956773 @default.
• W2020372992 hasConcept C62520636 @default.
• W2020372992 hasConcept C64297162 @default.
• W2020372992 hasConcept C81626474 @default.
• W2020372992 hasConcept C82706917 @default.
• W2020372992 hasConcept C86803240 @default.
• W2020372992 hasConcept C95974651 @default.
• W2020372992 hasConceptScore W2020372992C100460472 @default.
• W2020372992 hasConceptScore W2020372992C107187091 @default.
• W2020372992 hasConceptScore W2020372992C113196181 @default.
• W2020372992 hasConceptScore W2020372992C121285527 @default.
• W2020372992 hasConceptScore W2020372992C121332964 @default.
• W2020372992 hasConceptScore W2020372992C1291036 @default.
• W2020372992 hasConceptScore W2020372992C130472188 @default.
• W2020372992 hasConceptScore W2020372992C151730666 @default.
• W2020372992 hasConceptScore W2020372992C160671074 @default.
• W2020372992 hasConceptScore W2020372992C171250308 @default.
• W2020372992 hasConceptScore W2020372992C178790620 @default.
• W2020372992 hasConceptScore W2020372992C185592680 @default.
• W2020372992 hasConceptScore W2020372992C191897082 @default.
• W2020372992 hasConceptScore W2020372992C192562407 @default.
• W2020372992 hasConceptScore W2020372992C2779227376 @default.
• W2020372992 hasConceptScore W2020372992C2779851234 @default.
• W2020372992 hasConceptScore W2020372992C2816523 @default.
• W2020372992 hasConceptScore W2020372992C43617362 @default.
• W2020372992 hasConceptScore W2020372992C540031477 @default.
• W2020372992 hasConceptScore W2020372992C544956773 @default.
• W2020372992 hasConceptScore W2020372992C62520636 @default.
• W2020372992 hasConceptScore W2020372992C64297162 @default.
• W2020372992 hasConceptScore W2020372992C81626474 @default.
• W2020372992 hasConceptScore W2020372992C82706917 @default.
• W2020372992 hasConceptScore W2020372992C86803240 @default.
• W2020372992 hasConceptScore W2020372992C95974651 @default.
• W2020372992 hasIssue "6" @default.
• W2020372992 hasLocation W20203729921 @default.
• W2020372992 hasOpenAccess W2020372992 @default.
• W2020372992 hasPrimaryLocation W20203729921 @default.
• W2020372992 hasRelatedWork W1986868360 @default.
• W2020372992 hasRelatedWork W2011001474 @default.
• W2020372992 hasRelatedWork W2033683282 @default.
• W2020372992 hasRelatedWork W2035159056 @default.
• W2020372992 hasRelatedWork W2090008829 @default.
• W2020372992 hasRelatedWork W2147706266 @default.
• W2020372992 hasRelatedWork W2288145299 @default.
• W2020372992 hasRelatedWork W2765886561 @default.
• W2020372992 hasRelatedWork W2896928739 @default.
• W2020372992 hasRelatedWork W4386255545 @default.

• next