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• W2020386325 endingPage "134014" @default.
• W2020386325 startingPage "134014" @default.
• W2020386325 abstract "Semiconductor nanowaveguides are the key structure for light-guiding nanophotonics applications. Efficient guiding and confinement of single-mode light in these waveguides require high aspect ratio geometries. In these conditions, sidewall verticality becomes crucial. We fabricated such structures using a top-down process combining electron beam lithography and inductively coupled plasma (ICP) etching of hard masks and GaAs/AlGaAs semiconductors with Al concentrations varying from 0 to 100%. The GaAs/AlGaAs plasma etching was a single-step process using a Cl(2)/BCl(3)/Ar gas mixture with various fractions of N(2). Scanning electron microscope (SEM) observations showed that the presence of nitrogen generated the deposition of a passivation layer, which had a significant effect on sidewall slope. Near-ideal vertical sidewalls were obtained over a very narrow range of N(2), allowing the production of extremely high aspect ratios (>32) for 80 nm wide nanowaveguides." @default.
• W2020386325 created "2016-06-24" @default.
• W2020386325 creator A5015051704 @default.
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• W2020386325 date "2010-03-08" @default.
• W2020386325 modified "2023-10-02" @default.
• W2020386325 title "Extremely high aspect ratio GaAs and GaAs/AlGaAs nanowaveguides fabricated using chlorine ICP etching with N₂-promoted passivation" @default.
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• W2020386325 doi "https://doi.org/10.1088/0957-4484/21/13/134014" @default.
• W2020386325 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/20208121" @default.
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