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- W2020402698 abstract "A computer aided model to optimize the performance of drain engineered MOS transistors is reported. Simple closed form expressions for the cut off frequency, transit time and gate current were derived. A comparative study of the device characteristics is made between the conventional, spacer LDD and Fully Overlapped LDD (FOLD) MOS transistors. Suitable fold finger designs were made to optimize the FOLD structures for higher cut off frequency, lower transit time and better current driveability. The computed cut off frequency of these devices is found to be in microwave region. The FOLD structure promises better performance and reliability in comparison with other structures." @default.
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- W2020402698 date "1999-03-01" @default.
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- W2020402698 title "Optimization of Drain Engineered MOS Transistors for Microwave Frequency Applications" @default.
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- W2020402698 doi "https://doi.org/10.1080/02564602.1999.11416834" @default.
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