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- W2020409122 abstract "We propose a procedure to grow GaN quantum dots (QDs) on AlN by using the Ga surfactant effect in plasma-assisted molecular beam epitaxy. Self-formed GaN islands were spontaneously generated under vacuum, after evaporation of the Ga bilayer stabilizing the two-dimensional GaN layer grown under Ga-rich conditions. Island characteristics (size and density) are studied as a function of the nominal amount of GaN deposited. We demonstrate that the QD density can be controlled in the 3×1010 cm−2–2×1011 cm−2 range. It is shown that beyond a given amount of GaN nominally deposited, there is a coexistence between elastic and plastic relaxation, with GaN islands being formed on a partially relaxed two-dimensional GaN layer thicker than two monolayers." @default.
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- W2020409122 date "2003-07-29" @default.
- W2020409122 modified "2023-10-18" @default.
- W2020409122 title "Structure of GaN quantum dots grown under “modified Stranski–Krastanow” conditions on AlN" @default.
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- W2020409122 doi "https://doi.org/10.1063/1.1592866" @default.
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