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• W2020409491 endingPage "301" @default.
• W2020409491 startingPage "294" @default.
• W2020409491 abstract "Gallium nitride (GaN) films were grown on GaN(0001)/AlN/6H–SiC composite substrates at 700–780 °C by supersonic jet epitaxy using triethylgallium (TEG) and NH3. TEG was seeded in He and N2 supersonic free jets to obtain kinetic energies of ∼2.1 and ∼0.5 eV, respectively, and NH3 was supplied from a variable leak valve. Higher TEG beam intensities (by about a factor of 5) were obtained by seeding in He. In situ reflection high-energy electron diffraction indicated a transition from three-dimensional to two-dimensional (2D) growth between 730 and 750 °C for films grown using TEG seeded in He and a constant NH3/TEG flux ratio. Ex situ atomic force microscopy of films grown at 730 and 750 °C revealed smooth surfaces comprised of quasi-2D islands with irregular perimeters. Cross-sectional transmission electron microscopy evidenced that the film grown at 750 °C was homoepitaxial α-GaN with a high density of planar lattice defects. Secondary ion mass spectrometry detected high residual carbon concentrations in the films. The GaN growth rate at 750 °C was found to depend on TEG flux and NH3 pressure in a manner consistent with Langmuir–Hinshelwood kinetics. Films grown under NH3-rich conditions were faceted and microscopically rough, whereas nonfaceted, basal-plane growth was observed under Ga-rich conditions. The first-order dependence of growth rate on TEG flux under NH3-rich conditions was used to estimate Ga incorporation efficiencies for high- and low-energy TEG beams. The Ga incorporation efficiency is lower for high-energy TEG beams, consistent with a decrease in the sticking coefficient for dissociative chemisorption." @default.
• W2020409491 created "2016-06-24" @default.
• W2020409491 creator A5005575533 @default.
• W2020409491 creator A5009259074 @default.
• W2020409491 creator A5021923648 @default.
• W2020409491 creator A5023796459 @default.
• W2020409491 creator A5025181671 @default.
• W2020409491 creator A5050848601 @default.
• W2020409491 date "2002-12-20" @default.
• W2020409491 modified "2023-09-25" @default.
• W2020409491 title "Supersonic jet epitaxy of gallium nitride using triethylgallium and ammonia" @default.
• W2020409491 cites W1964239899 @default.
• W2020409491 cites W1969144364 @default.
• W2020409491 cites W1971696614 @default.
• W2020409491 cites W1975419123 @default.
• W2020409491 cites W1977920155 @default.
• W2020409491 cites W1978776927 @default.
• W2020409491 cites W1993030376 @default.
• W2020409491 cites W1994609706 @default.
• W2020409491 cites W1996338227 @default.
• W2020409491 cites W2000043536 @default.
• W2020409491 cites W2005101291 @default.
• W2020409491 cites W2009703595 @default.
• W2020409491 cites W2013667062 @default.
• W2020409491 cites W2018173670 @default.
• W2020409491 cites W2020418958 @default.
• W2020409491 cites W2020532854 @default.
• W2020409491 cites W2026765285 @default.
• W2020409491 cites W2027664710 @default.
• W2020409491 cites W2030859767 @default.
• W2020409491 cites W2042076370 @default.
• W2020409491 cites W2056411041 @default.
• W2020409491 cites W2057000614 @default.
• W2020409491 cites W2073577390 @default.
• W2020409491 cites W2077553720 @default.
• W2020409491 cites W2079874678 @default.
• W2020409491 cites W2081238262 @default.
• W2020409491 cites W2089175627 @default.
• W2020409491 cites W2124551377 @default.
• W2020409491 cites W2137846696 @default.
• W2020409491 cites W2152499401 @default.
• W2020409491 cites W2159725185 @default.
• W2020409491 cites W2164800776 @default.
• W2020409491 doi "https://doi.org/10.1116/1.1532736" @default.
• W2020409491 hasPublicationYear "2002" @default.
• W2020409491 type Work @default.
• W2020409491 sameAs 2020409491 @default.
• W2020409491 citedByCount "4" @default.
• W2020409491 countsByYear W20204094912017 @default.
• W2020409491 countsByYear W20204094912022 @default.
• W2020409491 crossrefType "journal-article" @default.
• W2020409491 hasAuthorship W2020409491A5005575533 @default.
• W2020409491 hasAuthorship W2020409491A5009259074 @default.
• W2020409491 hasAuthorship W2020409491A5021923648 @default.
• W2020409491 hasAuthorship W2020409491A5023796459 @default.
• W2020409491 hasAuthorship W2020409491A5025181671 @default.
• W2020409491 hasAuthorship W2020409491A5050848601 @default.
• W2020409491 hasBestOaLocation W20204094912 @default.
• W2020409491 hasConcept C110738630 @default.
• W2020409491 hasConcept C113196181 @default.
• W2020409491 hasConcept C120665830 @default.
• W2020409491 hasConcept C121332964 @default.
• W2020409491 hasConcept C159985019 @default.
• W2020409491 hasConcept C175665537 @default.
• W2020409491 hasConcept C185592680 @default.
• W2020409491 hasConcept C191897082 @default.
• W2020409491 hasConcept C192562407 @default.
• W2020409491 hasConcept C207114421 @default.
• W2020409491 hasConcept C2778871202 @default.
• W2020409491 hasConcept C2779227376 @default.
• W2020409491 hasConcept C2780464664 @default.
• W2020409491 hasConcept C43617362 @default.
• W2020409491 hasConcept C550372918 @default.
• W2020409491 hasConcept C77557913 @default.
• W2020409491 hasConceptScore W2020409491C110738630 @default.
• W2020409491 hasConceptScore W2020409491C113196181 @default.
• W2020409491 hasConceptScore W2020409491C120665830 @default.
• W2020409491 hasConceptScore W2020409491C121332964 @default.
• W2020409491 hasConceptScore W2020409491C159985019 @default.
• W2020409491 hasConceptScore W2020409491C175665537 @default.
• W2020409491 hasConceptScore W2020409491C185592680 @default.
• W2020409491 hasConceptScore W2020409491C191897082 @default.
• W2020409491 hasConceptScore W2020409491C192562407 @default.
• W2020409491 hasConceptScore W2020409491C207114421 @default.
• W2020409491 hasConceptScore W2020409491C2778871202 @default.
• W2020409491 hasConceptScore W2020409491C2779227376 @default.
• W2020409491 hasConceptScore W2020409491C2780464664 @default.
• W2020409491 hasConceptScore W2020409491C43617362 @default.
• W2020409491 hasConceptScore W2020409491C550372918 @default.
• W2020409491 hasConceptScore W2020409491C77557913 @default.
• W2020409491 hasIssue "1" @default.
• W2020409491 hasLocation W20204094911 @default.
• W2020409491 hasLocation W20204094912 @default.
• W2020409491 hasOpenAccess W2020409491 @default.
• W2020409491 hasPrimaryLocation W20204094911 @default.
• W2020409491 hasRelatedWork W2001824201 @default.
• W2020409491 hasRelatedWork W2027752514 @default.
• W2020409491 hasRelatedWork W2047166530 @default.

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