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- W2020446528 abstract "We demonstrate that a high quality SiO2 was successfully deposited onto ZnO by photochemical vapor deposition (photo-CVD). ZnO-based metal-oxide-semiconductor field effect transistors (MOSFETs) were also fabricated with such a photo-CVD oxide as the insulating layer. As compared with similar structure of ZnO-based metal-semiconductor FETs (MESFETs), it can be found that the gate leakage current was decreased to more than three orders of magnitude by inserting the photo-CVD oxide layer between ZnO and gate metal. With the 2 μm gate length, we also found that the saturated Ids and maximum Gm of the fabricated ZnO-based MOSFET were 61.1 mA mm −1 and 10.2 mS mm −1 , respectively. (Some figures in this article are in colour only in the electronic version)" @default.
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- W2020446528 date "2009-02-09" @default.
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- W2020446528 title "A ZnO-based MOSFET with a photo-CVD SiO<sub>2</sub>gate oxide" @default.
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- W2020446528 doi "https://doi.org/10.1088/0268-1242/24/3/035010" @default.
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