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• W2020521725 abstract "We have investigated the influence of hydrogen passivation on the electronic properties of ultra-thin polycrystalline silicon layers prepared by the aluminum-induced layer exchange process. Hall effect measurements reveal high hole carrier concentrations in the as-grown poly-Si layers up to several times 1019 cm−3. We find a drastic increase of the resistivity after hydrogenation for very thin samples, which is attributed to a combination of two effects: (1) the reduction of free holes due to acceptor passivation and (2) compensation of free holes remaining after H-passivation by interface trap states. Temperature-dependent measurements show that the activation energy of the dark conductivity increases strongly after the hydrogenation process. The origin of the compensation was investigated by spin-dependent transport measurements. In addition, the potential of the passivated poly-Si layers for electronic applications was studied. We have demonstrated a normally ON back-gate depletion mode transistor with a two mask process, which exhibits a field-effect mobility of 21 cm2/Vs for holes in the 20 nm thin channel layer." @default.
• W2020521725 created "2016-06-24" @default.
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• W2020521725 date "2008-05-01" @default.
• W2020521725 modified "2023-09-27" @default.
• W2020521725 title "Hydrogen passivation of ultra-thin low-temperature polycrystalline silicon films for electronic applications" @default.
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• W2020521725 doi "https://doi.org/10.1016/j.jnoncrysol.2007.09.040" @default.
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