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- W2020532854 abstract "The reaction of trimethylgallium (TMGa) on MOVPE-grown GaN(0001) was studied using temperature-programmed desorption (TPD), high-resolution electron energy loss spectroscopy (HREELS), Auger electron spectroscopy (AES), and Rutherford backscattering spectrometry (RBS). Dissociation of adsorbed TMGa to form monomethylgallium (MMGa) and/or dimethylgallium (DMGa) and surface methyl groups occurred at temperatures above 250 K. Chemisorbed MMGa/DMGa either desorbed between 250 and 450 K or underwent further dissociation forming adsorbed methyl groups and Ga atoms. For low coverages, surface methyl groups desorbed near 600 K producing gaseous methyl radicals. At higher coverages, a fraction of the methyl groups underwent dehydrogenation, resulting in the production of methane at 590 K and the deposition of carbon atoms." @default.
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- W2020532854 date "1999-05-01" @default.
- W2020532854 modified "2023-09-23" @default.
- W2020532854 title "Surface reactions of trimethylgallium on MOVPE-grown GaN(0001)" @default.
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- W2020532854 doi "https://doi.org/10.1016/s0039-6028(99)00291-5" @default.
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