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• W2020586178 abstract "We simulate charge transport through polymer grain boundaries under the buried critical interface of polymer and dielectric in polythiophene thin-film transistors and find the recently observed enhancement of electronic conduction can be a result of optimized crystallitic orientation. The simulation is based on a first-principle description of the system with transport properties evaluated by nonequilibrium Green's function method. Highly oriented crystal is assumed inside each grain and four most probable configurations of crystallitic orientation for grain boundary are considered. The calculation confirms that the electronic conductance can differ by five orders in magnitude for different conformations." @default.
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• W2020586178 date "2010-02-08" @default.
• W2020586178 modified "2023-10-03" @default.
• W2020586178 title "Crystallitic orientation effects on charge transport in polythiophene thin-film transistors" @default.
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• W2020586178 doi "https://doi.org/10.1063/1.3310023" @default.
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