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• W2020620975 abstract "Fractional-derivative spectra (FDS) have been developed for studying radiation effects in crystals by monitoring the optical interband transitions at critical points. Optical spectra of ${mathit{E}}_{1}$ structure of ${mathrm{As}}^{+}$-implanted Si, at doses from 3ifmmodetimeselsetexttimesfi{}${10}^{12}$ to 1ifmmodetimeselsetexttimesfi{}${10}^{16}$ ions ${mathrm{cm}}^{mathrm{ensuremath{-}}2}$, have been analyzed with use of 3/2th-derivative spectra. Symmetric line shapes in the ${mathit{E}}_{1}$ region near 3.4 eV were found in the FDS both for crystalline and ion-implanted samples until the critical dose, above which the spectra became structureless. No change was determined, within the experimental errors, either in the line-shape symmetry or in the ${mathit{E}}_{1}$ critical-point threshold for the implanted samples, compared with those of crystal Si, but a sharp increase in linewidth was observed. The FDS peak-to-peak height, which describes the crystal damage in the implanted region, is related to the fractional number of dangling bonds, found to vary with 1-(${mathrm{ensuremath{Phi}}}_{mathit{d}}$/ensuremath{Phi}${)}^{mathrm{ensuremath{beta}}}$, where ensuremath{beta}ensuremath{approxeq}0.33 initially followed by a transfer to 0.78 until saturation, ensuremath{Phi} is the total dose, and ${mathrm{ensuremath{Phi}}}_{mathit{d}}$ is a constant. Both of the sharp changes in linewidth and in dependence of the number of dangling bonds take place at the dose of 3ifmmodetimeselsetexttimesfi{}${10}^{13}$ ions ${mathrm{cm}}^{mathrm{ensuremath{-}}2}$, attributed to the accumulated stresses in the damaged region. The relationship between dangling bonds and structural disorder is discussed. For annealed samples, FDS directly yielded a shrinking of the ${mathit{E}}_{1}$ threshold, together with a decrease in the optical response. They were found to be logarithmically dependent on impurity concentration." @default.
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• W2020620975 date "1990-03-15" @default.
• W2020620975 modified "2023-10-14" @default.
• W2020620975 title "Optical analyses of radiation effects in ion-implanted Si: Fractional-derivative-spectrum methods" @default.
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• W2020620975 doi "https://doi.org/10.1103/physrevb.41.5799" @default.
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