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• W2020802365 abstract "The avalanche multiplication factor and the hole ionization coefficient in the amorphous selenium (a-Se) high-gain avalanche rushing amorphous photoconductor (HARP) target depend on the electric field. The phenomenon of avalanche multiplication and impact ionization in the 0.4-µm-thick a-Se HARP target is investigated. The hot carrier energy in the 0.4-µm-thick a-Se HARP target increases linearly as the target voltage increases. The energy relaxation length of hot carriers in the a-Se photoconductor of the 0.4-µm-thick HARP target saturates as the electric field increases. The average energy E av of a hot carrier and the energy relaxation length λ E in the a-Se photoconductor of the 0.4-µm-thick HARP target at 1 × 10 8 V/m were 0.25 eV and 2.5 nm, respectively. In addition, the hole ionization coefficient β and the avalanche multiplication factor M are derived as a function of the electric field, the average energy of a hot carrier, and the impact ionization energy. The experimental hole ionization coefficient β and the avalanche multiplication factor M in the 0.4-µm-thick a-Se HARP target agree with the theoretical results." @default.
• W2020802365 created "2016-06-24" @default.
• W2020802365 creator A5027755850 @default.
• W2020802365 creator A5077204637 @default.
• W2020802365 date "2014-02-03" @default.
• W2020802365 modified "2023-09-23" @default.
• W2020802365 title "Avalanche multiplication and impact ionization in amorphous selenium photoconductive target" @default.
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• W2020802365 doi "https://doi.org/10.7567/jjap.53.031401" @default.
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