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• W2020806504 abstract "Electrical properties and donor ionization energy level ED in Te-doped n-AlxGa1-xAs0.003Sb0.97 (0<x<0.8) grown by MBE have been investigated. The electron concentration of Te-doped AlGaAsSb was found to be strongly affected by the Al composition and by the donor energy level ED for Te. ED takes the form of an inverted “W” with a maximum at the Γ-L direct-indirect band crossover and L-X crossover. The structural characteritics of the AlGaAsSb/GaAs have been studied by double-crystal X-ray diffraction. Results show that the lattice misfit strain was not fully relaxed by the generation of mismatch dislocations." @default.
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• W2020806504 date "1993-02-01" @default.
• W2020806504 modified "2023-10-15" @default.
• W2020806504 title "The behavior of dopant incorporation and internal strain in AlxGa1−xAs0.03Sb0.97 grown by molecular beam epitaxy" @default.
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• W2020806504 doi "https://doi.org/10.1016/0022-0248(93)90684-o" @default.
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