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- W2020844593 abstract "In this letter, a high breakdown voltage GaN HEMT device fabricated on semi-insulating self-standing GaN substrate is presented. High quality AlGaN/GaN epilayer was grown on self-standing GaN substrate by metal organic chemical vapor deposition. A 0.8μm gate length GaN HEMT device was fabricated with oxygen plasma treatment. By using oxygen plasma treatment, gate forward working voltage is increased, and a breakdown voltage of more than 170V is demonstrated. The measured maximum drain current of the device is larger than 700 mA/mm at 4V gate bias voltage. The maximum transconductance of the device is 162 mS/mm. In addition, high frequency performance of the GaN HEMT device is also obtained. The current gain cutoff frequency and power gain cutoff frequency are 19.7 GHz and 32.8 GHz, respectively. A high f T -L G product of 15.76 GHzμm indicating that homoepitaxy technology is helpful to improve the frequency performance of the device." @default.
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- W2020844593 date "2013-08-01" @default.
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- W2020844593 title "High Breakdown Voltage GaN HEMT Device Fabricated on Self-Standing GaN Substrate" @default.
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- W2020844593 doi "https://doi.org/10.4028/www.scientific.net/amm.347-350.1535" @default.
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