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- W2020899325 abstract "We report the first effective p-type doping of molecular beam epitaxy (MBE) grown GaSb using silicon. The samples were grown by molecular beam epitaxy and characterized by Hall-effect measurements and photoluminescence. Room-temperature hole concentrations ranging from 4.0×1015 to 4.3×1018 cm−3 were obtained. Photoluminescence (PL) spectra undergo considerable broadening with increasing doping concentration, consistent with an impurity banding picture. Furthermore, the MBE-grown samples display only one of the two PL features found in a melt-grown substrate and no other satellites, suggesting higher material purity. This may be a direct benefit from the use of an antimony cracker, ultrahigh vacuum conditions, and high-purity elemental sources. The short-period strained-layer superlattice buffering scheme employed may have also contributed to better structural quality." @default.
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- W2020899325 date "1990-11-19" @default.
- W2020899325 modified "2023-09-26" @default.
- W2020899325 title "<i>p</i>-type doping of gallium antimonide grown by molecular beam epitaxy using silicon" @default.
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- W2020899325 doi "https://doi.org/10.1063/1.103907" @default.
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