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• W2020931381 abstract "Electrical characteristics and thermally induced metastability in a boron-doped hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT) deposited at 180 degrees C are discussed. The on/off ratio of the conductance and the field-effect mobility are similar to those for undoped a-Si:H TFTs. The device characteristics exhibit n- and p-channel operations. The enhancement in the drain currents caused by double injections of electrons and holes appears for the p-channel operation of the TFT. Thermal quenching experiments on boron-doped a-Si:H silicon-nitride ambipolar TFTs give clear evidence of the coexistence of two distinct metastable changes: the metastable creation of the active dopants and dangling bonds appear to increase with quenching temperature.< <ETX xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>></ETX>" @default.
• W2020931381 created "2016-06-24" @default.
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• W2020931381 date "1989-01-01" @default.
• W2020931381 modified "2023-10-16" @default.
• W2020931381 title "Electrical characteristics and thermally induced metastability in an amorphous-silicon ambipolar transistor" @default.
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• W2020931381 doi "https://doi.org/10.1109/16.40957" @default.
• W2020931381 hasPublicationYear "1989" @default.
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