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• W2021025792 abstract "Epitaxial RuSr2GdCu2O8 (Ru-1212) films have been synthesized by post-annealing of precursor films prepared by pulsed laser deposition (PLD). Two types of the precursors, i.e. chemically homogeneous and multilayered chemically structured, have been used. Nearly single phase (0 0 l) oriented Ru-1212 films were produced by post-annealing of the precursors. The films obtained from multilayered precursors demonstrated semiconductor properties with ferromagnetic ordering below TCurie ∼ 125 K. The films obtained from homogeneous precursors had Curie temperature in a range of 130–150 K. Those films had temperature dependence of resistance varying from semiconducting to superconducting behaviour. Appearance of superconductivity correlates with impurities level." @default.
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• W2021025792 date "2004-12-01" @default.
• W2021025792 modified "2023-10-17" @default.
• W2021025792 title "Growth of RuSr2GdCu2O8 films by post-annealing of pulsed laser deposited precursors" @default.
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• W2021025792 doi "https://doi.org/10.1016/j.physc.2004.10.006" @default.
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