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- W2021064753 abstract "Electrical properties, deep traps spectra and structural performance were studied for m-GaN films grown on m-SiC substrates by standard metalorganic chemical vapor deposition (MOCVD) and by MOCVD with lateral overgrowth (ELO) or sidewall lateral overgrowth (SELO). Standard MOCVD m-GaN films with a very high dislocation density over 109 cm−2 are semi-insulating n-type with the Fermi level pinned near Ec−0.7 eV when grown at high V/III ratio. For lower V/III they become more highly conducting, with the electrical properties still dominated by a high density (∼1016 cm−3) of Ec−0.6 eV electron traps. Lateral overgrowth that reduces the dislocation density by several orders of magnitude results in a marked increase in the uncompensated shallow donor density (∼1015 cm−3) and a substantial decrease of the density of major electron traps at Ec−0.25 and Ec−0.6 eV (down to about 1014 cm−3). Possible explanations are briefly discussed." @default.
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- W2021064753 date "2009-05-01" @default.
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- W2021064753 title "Electrical properties and deep traps spectra in undoped M-plane GaN films prepared by standard MOCVD and by selective lateral overgrowth" @default.
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- W2021064753 doi "https://doi.org/10.1016/j.jcrysgro.2009.01.065" @default.
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