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- W2021067148 abstract "In 〈100〉 p-type silicon arsenic is implanted (dose ≈︁ 1015cm−2) at substrate temperatures from 20 to 800 °C with an energy of 500 eV. The properties of as-implanted and annealed samples are studied using Rutherford backscattering, electron diffraction, and Van der Pauw measurements. In 〈100〉-p-Silizium wird Arsen mit einer Dosis von ≈︁ 1015cm−2 mit einer Energie von 500 eV bei Substrattemperaturen von 20 bis 800 °C implantiert. Die Eigenschaften der implantierten sowie der unterschiedlich ausgeheilten Proben werden mittels Rutherford Rückstreuung, Elektronen beugung und Van der Pauw-Messungen untersucht." @default.
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- W2021067148 date "1984-04-16" @default.
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- W2021067148 title "Low-energy implantation of arsenic in silicon" @default.
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- W2021067148 doi "https://doi.org/10.1002/pssa.2210820217" @default.
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