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- W2021071775 abstract "a-Si:H/Pd and a-Si:H/ITO interfaces were examined by TEM. In the case of Pd, the influence of an oxide layer on silicide formation and the silicide structure were investigated. It is shown that the stability and electrical performance of the ITO contact on a-Si:H are mainly dependent on surface roughness and an interfacial oxide layer." @default.
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- W2021071775 date "1987-12-01" @default.
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- W2021071775 title "The interfaces a-Si:H/Pd and a-Si:H/ITO: Structure and electronic properties" @default.
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- W2021071775 doi "https://doi.org/10.1016/0022-3093(87)90231-6" @default.
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