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• W2021105385 abstract "We have developed a novel planarization technique for gallium nitride (GaN) substrates using a photo-electro chemical process and solid acid catalyst. In this method, a GaN surface is oxidized by ultraviolet (UV) light irradiation, and the oxide layer is chemically removed by a solid acid catalyst. In the current work, the dependence of the removal rate on the UV light intensity was investigated." @default.
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• W2021105385 date "2010-04-01" @default.
• W2021105385 modified "2023-09-23" @default.
• W2021105385 title "Influence of the UV Light Intensity on the Photoelectrochemical Planarization Technique for Gallium Nitride" @default.
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• W2021105385 doi "https://doi.org/10.4028/www.scientific.net/msf.645-648.795" @default.
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