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- W2021123184 abstract "Atomic-layer etching of Br-saturated Si(111) surfaces has been achieved by using scanning tunneling microscope at room temperature. At a Br 2 dose of 100 L, most of the Si adatoms are saturated with Br atoms, while the 7×7 structure is completely retained. At further Br 2 doses up to 400 L, most of the Si adatoms are removed during the tip scanning at a sample bias of +3 V, and the underlying rest-atom layer is imaged. The adatoms remaining on the scanned surface are dominantly SiBr and SiBr 2 species, suggesting that highly brominated adatoms like SiBr 3 or SiBr 4 are more likely etched away during the tip scanning. These highly brominated silicon adatoms are not volatile at room temperature, but easily desorb through the field evaporation under the usual scan mode." @default.
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- W2021123184 title "Atomic-Layer Etching of a Br-Saturated Si(111)-7×7 Surface by Using Scanning Tunneling Microscope" @default.
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- W2021123184 doi "https://doi.org/10.1143/jjap.38.l1" @default.
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