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• W2021124516 abstract "The effects of incorporating a thin silicon layer into a SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> -based resistive-switching random access memory are presented. An improved performance, including a lower electroforming voltage and a more stable device current in the high-resistance programmed state, has been achieved by physical vapor deposition of a thin silicon layer onto the sidewall region of the device. Tristate pulse endurance performance over 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>6</sup> cycles has been demonstrated. The programmed data show immunity to read disturb testing at 1 V and can be sustained up to 150°C thermal exposure. It is concluded that the improved performance is due to formation of a more robust and more uniform conducting filament. As a result of this advantage, stable tristate programming can be realized in the SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> -based resistive memory device." @default.
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• W2021124516 date "2012-12-01" @default.
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• W2021124516 title "Tristate Operation in Resistive Switching of $ hbox{SiO}_{2}$ Thin Films" @default.
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• W2021124516 doi "https://doi.org/10.1109/led.2012.2218566" @default.
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