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- W2021124691 abstract "Thick AlN layers were grown directly on sapphire substrates by hydride vapor phase epitaxy at growth rates of 40–60 μm/h. The resulting films were colorless, smooth and specular. Subsurface cracking, attributed to the plastic relief of tensile strain from island coalescence, was observed by Nomarski optical contrast microscopy and cross-sectional scanning electron microscopy. Typical full-widths at half-maximum of X-ray rocking curves for the on-axis (0 0 0 2) and off-axis (2 0 2¯ 1) reflections of the AlN films were 310–640′′ and 630–800′′, respectively. The threading dislocation density was 2×109 cm−2 as determined by plan-view transmission electron microcopy. Convergent beam electron diffraction was used to determine that the surfaces of our AlN films are Al-face. These results represent substantial progress towards rapid production of AlN templates and free-standing AlN substrates of high optical quality." @default.
- W2021124691 created "2016-06-24" @default.
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- W2021124691 date "2006-12-01" @default.
- W2021124691 modified "2023-09-26" @default.
- W2021124691 title "Direct heteroepitaxial growth of thick AlN layers on sapphire substrates by hydride vapor phase epitaxy" @default.
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- W2021124691 doi "https://doi.org/10.1016/j.jcrysgro.2006.10.097" @default.
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