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- W2021166075 abstract "A commercially available electron cyclotron resonance etcher has been used to develop deep silicon trench etch processes using SF<SUB>6</SUB>-O<SUB>2</SUB> chemistries. It was found that the etch rate depends primarily on the delivery of reactant. Aspect ratio dependent etching is more evident in this chemistry than it is in chlorine-based chemistries. Selectivity of the silicon etch rate to the silicon dioxide mask etch rate is determined mostly by the influence of etch power on the silicon dioxide etch rate. Etch anisotropy is determined mostly by temperature and the O4-2) to SF<SUB>6</SUB> ratio. The high degree of anisotropy attainable under conditions of low temperature and high O<SUB>2</SUB> ratio must be balanced against the problem of micromasking which is also favored by these conditions. Deep silicon trench etching has the potential to have a major impact on micromachining. However, due to the many interactions between numerous variables each etch process must be tailored to the individual application." @default.
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- W2021166075 date "1996-09-23" @default.
- W2021166075 modified "2023-09-23" @default.
- W2021166075 title "<title>Characterization and application of deep Si trench etching</title>" @default.
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- W2021166075 doi "https://doi.org/10.1117/12.251223" @default.
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