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W2021170356 abstract "The influence of random telegraph noise (RTN) in MOSFETs on drain current (I d ) during the rise/fall edges of the pulsed gate voltage (V g ) cycle was investigated. We have revealed for the first time that the existence of RTN increases I d fluctuations under dynamic V g by making a comparison between FETs with and without RTN. The initial trap occupation states before varying V g , which are governed by the RTN profiles, significantly affect the Id values during the rise/fall edges of V g . The revealed effects of RTN with different profiles on I d under dynamic V g will be useful for designing ultrahigh speed circuits." @default.
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W2021170356 date "2014-01-01" @default.
W2021170356 modified "2023-09-24" @default.
W2021170356 title "Impact of Random Telegraph Noise Profiles on Drain-Current Fluctuation During Dynamic Gate Bias" @default.
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W2021170356 doi "https://doi.org/10.1109/led.2013.2288981" @default.
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