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- W2021198503 abstract "We studied the plastic deformation of an ultrathin silicon-on-insulator with epitaxial Si1−xGex by transmission electron microscopy, Raman spectroscopy, and finite-element method. We analyzed a top Si layer of 10 nm (testing also a 2 nm layer) with epitaxial Si0.64Ge0.36 stressors of 50 and 100 nm. SiGe plastically deforms the top Si layer, and this strain remains even when Si1−xGex is removed. For low dislocation densities, dislocations are gettered close to the Si/SiO2 interface, while the SiGe/Si interface is coherent. Beyond a threshold dislocation density, interactions between dislocations force additional dislocations to position at the Si1−xGex/Si interface." @default.
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- W2021198503 date "2013-07-29" @default.
- W2021198503 modified "2023-10-18" @default.
- W2021198503 title "Dislocation distribution across ultrathin silicon-on-insulator with epitaxial SiGe stressor" @default.
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- W2021198503 doi "https://doi.org/10.1063/1.4817071" @default.
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