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- W2021308952 abstract "We present recent results on the development of laser direct writing of tungsten from WF6 on silicon oxynitride (SiOxNy), titanium nitride (TiN) and galium arsenide (GaAs). Ar+ laser processing from WF6 and H2 on (SiOxNy) produces low resistivity (13 μω cm) pure tungsten lines having widths as low as 2.5 μm. Deposition on GaAs using the Ar+ laser occurs in a very narrow process window and is found to be irreproducible. Surface analysis suggests that a spontaneous reaction between WF6 and GaAs, producing GaF3, takes place. This reaction may poison the initiation of the deposition. Finally, in order to develop a compact and inexpensive laser direct writing system, we have also investigated the use of a diode laser as the heat source. Diode laser processing from WF6 and SiH4 on TiN yields WSix (x = 0.7−0.9) lines having widths as low as 4 μm." @default.
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- W2021308952 date "1992-10-01" @default.
- W2021308952 modified "2023-09-28" @default.
- W2021308952 title "Laser direct writing of tungsten from WF6" @default.
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- W2021308952 doi "https://doi.org/10.1016/0040-6090(92)90911-t" @default.
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