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- W2021387415 abstract "An infra-red lamp-annealing technique was employed for postannealing Si ion-implanted InP substrates. The effective electron mobility (μeff) of SiO2-InP metal-insulator-semiconductor field-effect transistors fabricated using infrared lamp annealing is remarkably temperature-dependent. The maximum μeff is ̃ 11000 cm2/Vs at 75 K and 1500–2500 cm2/Vs at room temperature." @default.
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- W2021387415 date "1985-01-01" @default.
- W2021387415 modified "2023-09-25" @default.
- W2021387415 title "Improvement of InP MISFET characteristics using infra-red lamp annealing" @default.
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- W2021387415 doi "https://doi.org/10.1049/el:19850486" @default.
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