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• W2021508775 abstract "Abstract Semiconductor technology issues some of the most intriguing challenges for Auger analysis. The minimum feature size is approaching the quarter‐micron range, while simultaneously, the vertical dimension is being utilized for further integration resulting in an extremely nonplanar surface after numerous processing steps. Although the ultimate limitations of Auger electron spectroscopy combined with sputter depth profiling (lateral resolution < 100 nm, depth resolution < 3 nm) are compatible with such advanced processes, the analysis is often restricted by sample‐related issues. An example is a depth profile through an Al/TiN/Ti metallization system which, under routine analysis conditions, has a depth resolution as poor as several hundred nanometers. Similarly, the lateral resolution accessible in the microanalysis of the sidewall of a conductor line is considerably degraded by scattering of primary electrons into adjacent areas, or the thickness of an oxide film found at the bottom of contact or via holes cannot be determined by sputter profiling because of shadowing of the ion beam and deposition of sputtered material from the sidewall to the bottom. This paper illustrates that, nevertheless, answers for such difficult analytical tasks can be found by careful optimization of analysis conditions, by simple but unconventional modification of the Auger instrument, or by novel data evaluation methods. With these results, significant input can be provided for process engineering and failure analysis in semiconductor technology." @default.
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• W2021508775 creator A5064682297 @default.
• W2021508775 date "1994-07-01" @default.
• W2021508775 modified "2023-09-27" @default.
• W2021508775 title "Advances in Auger microanalysis for semiconductor technology" @default.
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• W2021508775 doi "https://doi.org/10.1002/sia.740220172" @default.
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