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- W2021570667 abstract "With the emergence of sophisticated high voltage devices it is becoming necessary to integrate deep junctions with the planar technology. Because of the many disadvantages of the conventional p‐type dopant, namely boron, use of aluminum and gallium is common practice in the fabrication of deep junctions. Sealed tube Al or Ga diffusion results in a damaged surface layer on silicon wafers. During subsequent heat‐treatment in oxidizing ambient these dopants outdiffuse, causing depletion in the silicon and forming their respective oxides at the interface. The pile up of the dopants near the silicon surface and their interaction with the seriously degrade the masking properties of the oxide during phosphorus diffusion. Phosphorus induced crystallization of the amorphous oxide compounds the problem of mask failure. Possible solutions to minimize the degradation of the thermal oxide during device processing are discussed." @default.
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- W2021570667 date "1974-01-01" @default.
- W2021570667 modified "2023-10-17" @default.
- W2021570667 title "Compatibility of Oxide Passivation and Planar Junctions with Al, Ga, and P Diffusions" @default.
- W2021570667 doi "https://doi.org/10.1149/1.2401721" @default.
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