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- W2021894987 abstract "A method is described of observing the dynamical behaviour of the interaction and transformation of dislocations that are created during in-situannealing of ion-implanted Si in a high voltage electron microscope (HVEM).In B+-implanted silicon the formation of rod-like defects (RLD) was observed, their transformation into perfect dislocation loops (DL), and the formation of frank partial loops (FL). The transformation of FL into perfect DL is discussed in detail. The transformation of small prismatic DL into large meandering shear loops is shown in BF+2-im-planted silicon. The results are compared with short-time annealed material. Es wird eine Methode vorgestellt, die es gestattet, die Dynamik der Wechsclwirkung und der Transformation von Versetzungen, die während der in-situ Ausheilung von ionenimplantiertem Si entstanden sind, direkt im HVEMzu beobachten. In B+-implantiertem Si ist sowohl die Bildung von RLD, sowie deren Transformation in perfekte DL, als auch die Bildung von FL zu beobachten. Die Transformation von FL in perfekte DL wird im Detail diskutiert. Die Transformation von kleinen prismatischen DL in große mäanderförmige Scherloops wird in BF+2-implantiertem Si gezeigt. Ein Vergleich mit „Kurzzeit”︁-ausgeheiltem Material wird gegeben." @default.
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- W2021894987 date "1989-03-16" @default.
- W2021894987 modified "2023-10-09" @default.
- W2021894987 title "Results of In-Situ Annealing of Ion-Implanted Silicon in a High Voltage Electron Microscope" @default.
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- W2021894987 doi "https://doi.org/10.1002/pssa.2211120157" @default.
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