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• W2021956025 abstract "We have investigated the influence of the surface roughness of an insulator on the threshold voltage shift caused by gate bias stressing in organic field-effect transistors (OFETs). Our investigation was conducted for OFETs with SiO2 insulators. We observed that the threshold voltage shift is extremely sensitive to changes in the fine roughness of the SiO2 surface; the shift increased with the roughness. The large shift in OFETs with rough SiO2 insulators can be attributed to lattice distortion in pentacene layers deposited on rough SiO2 surfaces." @default.
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• W2021956025 date "2008-07-21" @default.
• W2021956025 modified "2023-09-24" @default.
• W2021956025 title "Influence of fine roughness of insulator surface on threshold voltage stability of organic field-effect transistors" @default.
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• W2021956025 doi "https://doi.org/10.1063/1.2957987" @default.
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