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• W2021964992 abstract "Mechanism of high purity Cu thin film deposition from a new F-free Cu complex, Cu(EDMDD)2 have been studied using H-assisted plasma CVD (HAPCVD). The species of Cu(EDMDD) is the dominant neutral radical dissociated from Cu(EDMDD)2 by electron impact. In situ measurements by Fourier transform infrared (FTIR) spectroscopy show that H atoms are quite effective in removing impurities in Cu films. The simplified version of important surface reaction is Cu(EDMDD) + H→Cu + H(EDMDD). Cu films deposited by HAPCVD have a low as-deposited resistivity of 1.84 μΩ cm and is 20 nm thick in trenches 0.5 μm wide and 2.73 μm deep." @default.
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• W2021964992 date "2006-05-01" @default.
• W2021964992 modified "2023-10-18" @default.
• W2021964992 title "Mechanism of Cu deposition from Cu(EDMDD)2 using H-assisted plasma CVD" @default.
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• W2021964992 doi "https://doi.org/10.1016/j.tsf.2005.08.028" @default.
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