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• W2021978715 abstract "Abstract Our present understanding of the factors which affect the growth and properties of the anodic oxides of GaAs is reviewed. The various parameters which affect film composition are discussed and some new data from studies by electron spectroscopy for chemical analysis are given. An anodic growth mechanism is postulated which involves the interstitial ion drift of gallium and arsenic ions and a vacancy transport mechanism for oxygen. Experimental evidence in support of this is discussed. A brief review of the electrical properties of GaAs anodic native oxides is given. Areas in which further work is required are outlined." @default.
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• W2021978715 date "1979-01-01" @default.
• W2021978715 modified "2023-09-27" @default.
• W2021978715 title "An assessment of the quality of anodic native oxides of GaAs for MOS devices" @default.
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• W2021978715 doi "https://doi.org/10.1016/0040-6090(79)90051-8" @default.
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